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| FDQ7238S September 2003 FDQ7238S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description The FDQ7238S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild's SyncFET TM technology. Features * Q2: 14 A, 30V. RDS(on) = 9.5 m @ VGS = 10V RDS(on) = 10.5 m @ VGS = 4.5V * Q1: 11 A, 30V. RDS(on) = 14.5 m @ VGS = 10V RDS(on) = 16 m @ VGS = 4.5V SO-14 pin 1 Vin G1 G2 S2 S2 S2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage TA = 25 unless otherwise noted C Parameter Q2 30 16 (Note 1a) - Continuous - Pulsed Power Dissipation for Single Operation Drain Current (Note 1a & 1b) (Note 1c & 1d) 14 50 2.4 1.3 -55 to +150 Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) (Note 1c & 1d) 52 94 Package Marking and Ordering Information Device Marking FDQ7238S Device Reel Size 13" FDQ7238S Tape width 16mm (c)2003 Fairchild Semiconductor Corporation Q1 30 16 11 50 1.8 1.1 Units V V A W C 68 118 C/W Quantity 2500 units FDQ7238S Rev A1 (W) FDQ7238S Electrical Characteristics Symbol BVDSS TA = 25 unless otherwise noted C Parameter Test Conditions Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 67 48 2872 1906 522 311 186 134 1.5 0.8 14 11 13 13 51 28 18 15 48 33 6 4 8 4 30 30 26 25 Max Units V mV/C 500 1 100 100 -100 -100 A nA nA Off Characteristics BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 A Breakdown Voltage Temperature ID = 10 mA, Referenced to 25C Coefficient ID = 250 A, Referenced to 25C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 16 V, VGS = -16 V, VDS = 0 V VDS = 0 V VGS(th) On Characteristics Gate Threshold Voltage VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A ID = 10 mA, Referenced to 25C ID = 250 A, Referenced to 25C VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 14A, TJ = 125C VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 11, TJ = 125C VGS = 10 V, VDS = 5 V VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 14 A VDS = 10 V, ID = 11 A VDS = 15 V, f = 1.0 MHz VGS = 0 V, 1 1 1.4 1.4 -3 -5 7 8 11 11 12 16 3 3 V mV/C 9.5 10.5 16 14.5 16 23 m A S Ciss Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) pF pF pF Coss Crss RG VGS = 15 mVf = 1.0 MHz td(on) tr Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 10V, ID = 1 A, RGEN = 6 td(off) tf Qg Qgs Qgd Q2 VDS = 15 V, ID = 14A, VGS = 10 V Q1 VDS = 15 V, ID = 11A,VGS = 10 V 25 20 23 23 82 45 32 27 67 46 nS nS nS nS nC nC nC FDQ7238S Rev A1 (W) FDQ7238S Electrical Characteristics Symbol IS TA = 25 unless otherwise noted C Parameter Test Conditions Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Max Units 34 2.1 0.7 1.2 nS nC nS nC A V Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.4 A VGS = 0 V, IS = 1.9 A VGS = 0 V, IS = 2.1 A IF = 14A diF/dt = 300 A/s IF = 11A diF/dt = 100 A/s (Note 2) (Note 2) (Note 2) VSD trr Qrr trr Qrr NOTE : 0.44 0.37 0.7 26 22 25 14 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 68 C/W when mounted on a 1in2 pad of 2 oz copper (Q1). c) 118 C/W when mounted on a minimum pad of 2 oz copper (Q1). b) 52 C/W when mounted on a 1in2 pad of 2 oz copper (Q2). d) 94 C/W when mounted on a minimum pad of 2 oz copper (Q2). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDQ7238S Rev A1 (W) FDQ7238S Typical Characteristics : Q2 60 VGS = 10V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0 0.5 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 3.5V 4.5V 2.5V 2.2 2 VGS = 2.5V 1.8 1.6 1.4 1.2 1 0.8 3.0V 3.5V 4.5V 6.0V 10V 1 1.5 2 0 10 20 30 40 50 60 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.024 RDS(ON), ON-RESISTANCE (OHM) 0.022 0.02 0.018 0.016 0.014 0.012 0.01 0.008 0.006 2 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 14A VGS =10V ID = 7A TA = 125oC TA = 25oC 4 6 8 10 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 70 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V 60 ID, DRAIN CURRENT (A) 50 40 30 20 10 0 1 1.5 2 TA = -55oC 125oC 25oC IS, REVERSE DRAIN CURRENT (A) 10 VGS = 0V 1 TA = 125oC 25oC 0.1 0.01 -55oC 2.5 3 3.5 0.001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7238S Rev A1 (W) FDQ7238S Typical Characteristics : Q2 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 14A 8 20V VDS = 10V 15V CAPACITANCE (pF) 4000 CISS 3200 f = 1MHz VGS = 0 V 6 2400 4 1600 COSS 800 2 CRSS 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 1ms 10ms 100ms 10s 1s P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 100us ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 40 SINGLE PULSE RJA = 94 C/W TA = 25 C 30 1 DC 20 0.1 VGS = 10V SINGLE PULSE RJA = 94oC/W TA = 25oC 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 94 C/W P(pk t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1d. Transient thermal response will change depending on the circuit board design FDQ7238S Rev A1 (W) FDQ7244S Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7238S Q2. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power dissipated in the device. 0.1 TA = 125 C 0.01 TA = 100 C 0.001 o o o CURRENT : 0.8A/div IDSS, REVERSE LEAKAGE CURRENT (A) 0.0001 TA = 25 C 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME : 12nS/div Figure 12. FDQ7238S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6644). Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. CURRENT : 0.8A/div TIME : 12.5nS/div Figure 13. Non-SyncFET (FDS6644) body diode reverse recovery characteristic. FDQ7238S Rev A1 (W) FDQ7238S Typical Characteristics : Q1 60 50 ID, DRAIN CURRENT (A) 40 30 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 3.5V 2.4 3.0V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 3.0V 3.5V 4.5V 6.0V 10V VGS = 2.5V 4.5V 2.5.V 20 10 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 15. On-Region Characteristics. Figure 16. On-Resistance Variation with Drain Current and Gate Voltage. 0.036 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 RDS(ON), ON-RESISTANCE (OHM) ID = 11A VGS = 10V ID = 5.5A 0.032 0.028 0.024 TA = 125oC 0.02 0.016 0.012 TA = 25oC -25 0 25 50 75 100 o 125 150 0.008 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 17. On-Resistance Variation with Temperature. 60 Figure 18. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 1 1.5 2 TA = -55oC 125oC 25oC 10 1 0.1 0.01 0.001 0.0001 VGS = 0V TA = 125oC 25oC -55oC 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Transfer Characteristics. Figure 20. Body Diode Forward Voltage Variation with Source Current and Temperature. FDQ7238S Rev A1 (W) FDQ7238S Typical Characteristics : Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 11A 8 CAPACITANCE (pF) 20V 6 VDS = 10V 15V 2400 2000 1600 1200 800 400 0 0 5 10 15 20 25 30 35 0 5 10 15 20 COSS CRSS CISS f = 1MHz VGS = 0 V 4 2 0 Qg, GATE CHARGE (nC) 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 21. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 22. Capacitance Characteristics. 50 100s ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s 40 SINGLE PULSE RJA = 118 C/W TA = 25 C 30 1 VGS = 10V SINGLE PULSE RJA = 118oC/W TA = 25oC 0.01 0.01 0.1 DC 20 0.1 10 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 23. Maximum Safe Operating Area. Figure 24. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 R JA(t) = r(t) * R JA R JA = 118 C/W P(pk) t1 t2 SINGLE PULSE 0.01 T J - T A = P * R JA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design. FDQ7238S Rev A1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM TM EnSigna ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 |
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